Indium(Iii) Phosphide 磷化铟

CAS 22398-80-7 MFCD00016153

化学结构图

22398-80-7
SMILES: P#[In]

化学属性

Mol. FormulaInP
Mol. Weight146
Melting Point1070°
Density4.81
TSCAYes

别名和识别编码

Chemical NameIndium(Iii) Phosphide
Synonym {uni_hamburg} Indium monophosphide Indium phosphide, polycryst Indium phosphide (InP) Indium phosphide Indium (III) phosphide 磷化铟(III) Indium Monophosphide InP
MDL NumberMFCD00016153
PubChem Substance ID24862718
EC Number244-959-5
CAS Number22398-80-7
Merck Number14,4953
Chemical Name Translation磷化铟
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分类

  • {uni_hamburg}
  • {SNA} Catalysis and Inorganic Chemistry, Ceramics, Ceramics by Element, Chemical Synthesis, Indium, Metal and Ceramic Science, Phosphide, Phosphorus, 材料科学
  • {SNA} Catalysis and Inorganic Chemistry, Ceramics, Ceramics by Element, Chemical Synthesis, Indium, Materials Science, Metal and Ceramic Science, Phosphide, Phosphorus

相关文献及参考

  • Short: III/23a Title: Electronic Structure of Solids: Photoemission Spectra and Related Data Author: Chiang, T.C.; Frank, K.H.; Freund, H.J.; Goldmann, A.; Himpsel, F.J.; Karlsson, U.; Leckey, R.C.; Schneider, W.D. Editor: Goldmann, A.; Koch, E.-E. Source: Landolt-Börnstein, New Series Volume: III/23a Page: 1-430 Year: 1989 ISBN: 3-540-50042-1 ISBN: 978-3-540-50042-1 Internet Resource: DOI:10.1007/b35974 RefComment: 904 figs., XI, Hardcover Abstract: Photoelectron spectroscopy has matured considerably during the last decade. The experimental techniques were improved markedly. Photon line sources and,in particular, synchrotron radiation sources are now routinely available in many places. The volume summarizes data on the bulk electronic structure of solids. Besides the photoelectron results, a limited set of other data (such as lattice constants and work functions) useful in the context of band structure information is presented.
  • Short: III/24C Title: Physics of Solid Surfaces: Interaction of Charged Particles and Atoms with Surfaces Author: Alkemade, P.; Celli, V.; Chiarotti, G.; Rocca, M.; Zanazzi, E. Editor: Chiarotti, G. Source: Landolt-Börnstein, New Series Volume: III/24C Year: 1995 ISBN: 3-540-56071-8 ISBN: 978-3-540-56071-5 Internet Resource: DOI:10.1007/b87125 RefComment: 207 figs., XII, 328 pages. Hardcover Abstract: In the last two decades surface physics has experienced an explosive expansion caused by the development and/or substantial improvement of surface sensitive techniques and UHV appa-ratus. It has grown into a mature field of research, with data of the highest accuracy and repro-ducibility. Surface physics is of great importance for technological applications like control of the work function of semiconductors,interface physics,field effect devices, molecular beam epitaxy, chemisorption and catalysis, corrosion, surface hardening etc.. The present volume is restricted to the so-called "clean" surfaces, i.e

安全信息

WGK Germany3
RTECSNL1800000
Safety Statements
  • S45 In case of accident or if you feel unwell seek medical advice immediately (show the label where possible) 发生事故时或感觉不适时,立即求医(可能时出示标签);
  • S53 Avoid exposure - obtain special instructions before use 避免接触,使用前获得特别指示说明;
  • S36/37 Wear suitable protective clothing and gloves 穿戴适当的防护服和手套;
Risk Statements
  • R40 Limited evidence of a carcinogenic effect 有限证据表明其致癌作用
Hazard Codes T
GHS Symbol
Precautionary statements
  • P281 Use personal protective equipment as required. 使用所需的个人防护装备。
  • P308+P313
  • P201 Obtain special instructions before use. 使用前获取专门指示。
Signal word Danger
Hazard statements
  • H350 May cause cancer 可能致癌
  • H361 Suspected of damaging fertility or the unborn child 怀疑对生育能力或未出生婴儿造成伤害
  • H372 Causes damage to organs through prolonged or repeated exposure 长期或频繁接触会损伤器官

系列性分类


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