Tetrakis(2,2,6,6-Tetramethyl-3,5-Heptanedionato)Zirconium(Iv) 四(2,2,6,6-四甲基-3,5-庚二酸)锆
CAS 18865-74-2 MFCD00145380
化学结构图
SMILES: CC(C)(C)/C(=C/C(=O)C(C)(C)C)/O[Zr](O/C(=C\C(=O)C(C)(C)C)/C(C)(C)C)(O/C(=C\C(=O)C(C)(C)C)/C(C)(C)C)O/C(=C\C(=O)C(C)(C)C)/C(C)(C)C
化学属性
| TSCA | No |
|---|---|
| Mol. Formula | Zr(C11H19O2)4 |
| Mol. Weight | 824 |
| Appearance | white xtl. |
| Boiling Point | subl. 180°C/0.1mm |
| Melting Point | 318-320°C |
别名和识别编码
| Chemical Name | Tetrakis(2,2,6,6-Tetramethyl-3,5-Heptanedionato)Zirconium(Iv) |
|---|---|
| Synonym | Tetrakis(2,2,6,6-tetramethylheptane-3,5-dionato)zirconium; Zirconium tetrakis(dipivaloylmethanato); Zirconium tetrakis(dipivaloylmethane) 四(2,2,6,6-四甲基-3,5-庚二酸)锆 Zr(TMHD)4 |
| PubChem Substance ID | 24871583 |
| Chemical Name Translation | 四(2,2,6,6-四甲基-3,5-庚二酸)锆 |
| MDL Number | MFCD00145380 |
| CAS Number | 18865-74-2 |
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分类
- {SNA} CVD and ALD Precursors by Metal, Materials Science, Micro/NanoElectronics, Vapor Deposition Precursors, Zirconium
- {SNA} CVD and ALD Precursors by Metal, Micro/NanoElectronics, Vapor Deposition Precursors, Zirconium, 材料科学
相关文献及参考
- 1. Chen, I-S. et al. Chem. Mater. 11 , 209, (1999)
- 2. Zhang, Y. et al. J. Am. Chem. Soc. 119 , 9295, (1997)
- 3. Bourhila, N. et al. Proc. Electrochem. Soc. 97-25 , 417, (1997)
- 4. Chen, I-S. Chem. Mater. 11 , 209, (1999)
安全信息
GHS Symbol
- P261 Avoid breathing dust/fume/gas/mist/vapours/spray. 避免吸入粉尘/烟/气体/烟雾/蒸汽/喷雾。
- P305+P351+P338
- H315 Causes skin irritation 会刺激皮肤
- H319 Causes serious eye irritation 严重刺激眼睛
- H335 May cause respiratory irritation 可能导致呼吸道刺激
- S26 In case of contact with eyes, rinse immediately with plenty of water and seek medical advice 眼睛接触后，立即用大量水冲洗并征求医生意见；
- S36 Wear suitable protective clothing 穿戴适当的防护服；
- R36/37/38 Irritating to eyes, respiratory system and skin 对眼睛、呼吸系统和皮肤有刺激性
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